SYMPOSIA PAPER Published: 01 January 2000

Gate Oxide Reliability Assessment and Some Connections to Oxide Integrity


Most characterizations of oxide reliability involve extrapolation of high voltage results to low voltage operation. Wearout at high voltages tends to be global while many reliability attributes, such as breakdown and stress-induced-leakage-currents (SILCs), tend to be local. This paper will explore several oxide reliability assessment attributes, including oxide breakdown, stress-induced-leakage-currents, and trap generation. These attributes will be described and an attempt will be made to associate them with oxide integrity.

Author Information

Dumin, DJ
Clemson University, Clemson, South Carolina
Price: $25.00
Contact Sales
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Developed by Committee: F01
Pages: 3–23
DOI: 10.1520/STP13480S
ISBN-EB: 978-0-8031-5431-5
ISBN-13: 978-0-8031-2615-2