STP Published: 1998

Recombination Lifetime Measurements in Silicon

Editor(s): Dinesh C. Gupta, Fred R. Bacher, William M. Hughes

Presents state-of-the-art research on measurement interpretation, lifetime applications, measurement interferences and future directions for silicon and device processing. This unique volume features 30 comprehensive, peer-reviewed papers from an array of international experts in the field covering such topics as:

• Lifetime Concepts

• Photoconductivity Techniques

• Elymat Techniques

• Surface Photovoltaic Techniques

• Comparisons Between Measuring Techniques

• Applications of Lifetime Measurement in Silicon

• Standardization and Industry Practices

• Round Robin Testing Results.

This is an invaluable publication for semiconductor process, equipment and reliability engineers, fab technologists, quality engineers and silicon material scientists, as well as material characterization analysts and device engineers.

Table of Contents

D Gupta, FR Backer, W Hughes

DK Schroder

ER Weber, AA Istratov, SA McHugo, H Hieslmair, C Flink

G Zoth

H Hashizume, S Sumie, Y Nakai

K Kurita, T Shingyouji

A Romanowski, A Buczkowski, A Karoui, GA Rozgonyi

C Swiatkowski

T Wang, TF Ciszek

P Eichinger

GA Keefe, WM Hughes

J Lagowski, P Edelman, V Faifer

E Kamieniecki

S Liberman

Y-I Ogita, N Tate, H Masumura, M Miyazaki, K Yakushiji

A Buczkowski

Y Pan

T Pavelka

F Beaudoin, M Simard-Normandin, M Meunier

R Falster, G Borionetti

A Karoui, Q Zhang, A Romanowski, GA Rozgonyi, P Rushbrook, JF Daviet

A Kempf, P Blöchl, A Huber, F Fabry, L Meinecke

Y Kitagawara, T Yoshida, T Koide, Y Hayamizu

J Linn, G Rouse, W Wereb, R Leggett, S Slasor, R Lowry, R Cameron, R Canfield

M Morimasa

G Obermeier, J Hage, D Huber

MR Seacrist

BL Sopori, W Chen, M Symko

M Miyazaki, K Kawai, M Ichimura

AG Schönecker, W Koch

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Developed by Committee: F01
Pages: 415
DOI: 10.1520/STP1340-EB
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9