SYMPOSIA PAPER Published: 01 January 2004

Revisiting the Use of SiC as a Post Irradiation Temperature Monitor


Silicon carbide has been used as a post-irradiation temperature monitor since first proposed for this use in 1961. The basic technique has been the repeated measurement of the length of a SiC monitor following isochronal annealing. This technique has been shown to overestimate irradiation temperature by ∼100°C. This paper discusses the use of alternate techniques, including electrical resistivity, to infer irradiation temperature. It is shown that electrical resistivity predicts irradiation temperature within ∼20°C of actual irradiation temperature. Additionally, this technique can be used in the low-temperature (<150°C) amorphization regime, and in irradiation temperatures where irradiation damage is characterized by simple defects in crystalline SiC (<900°C).

Author Information

Snead, LL
Oak Ridge National Laboratory, Oak Ridge, TN
Williams, AM
Oak Ridge National Laboratory, Oak Ridge, TN
Qualls, AL
Oak Ridge National Laboratory, Oak Ridge, TN
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Developed by Committee: E10
Pages: 623–633
DOI: 10.1520/STP11262S
ISBN-EB: 978-0-8031-5494-0
ISBN-13: 978-0-8031-3477-5