A new instrument to accurately and verifiably measure mechanical properties across an entire MEMS wafer is under development. We have modified the optics on a conventional microelectronics probe station to enable three-dimensional imaging while maintaining the full working distance of a long working distance objective. This allows standard probes or probe cards to be used. We have proceeded to map out mechanical properties of polycrystalline silicon along a wafer column by the Interferometry for Material Property Measurement (IMaP) methodology. From interferograms of simple actuated cantilevers, out-of-plane deflection profiles at the nanometer scale are obtained. These are analyzed by integrated software routines that extract basic mechanical properties such as cantilever curvature and Young's modulus. Non-idealities such as support post compliance and beam take off angle are simultaneously quantified. Curvature and residual stress are found to depend on wafer position. Although deflections of cantilevers varied across the wafer, Young's modulus E ∼ 161 GPa is independent of wafer position as expected. This result is achieved because the non-idealities have been taken into account.