SYMPOSIA PAPER Published: 01 January 2001

Effect of Mass and Energy on Preferential Amorphization in Polycrystalline Silicon Film during Ion Irradiation


In-situ transmission electron microscopy was applied for clarifying radiation-induced amorphization, the behavior of grain boundaries under ion irradiation. The effect of mass and energy of several ions on preferential amorphization was discussed. The critical fluence for amorphization strongly depended on the temperature, where it increased with increasing temperature. Further, with increasing ion mass and decreasing energy, the critical fluence was reduced. The onset temperature for preferential amorphization increased in the case of heavier mass and lower energy ion irradiation. All of the results imply the importance of the balance between damage production and recovery.

Author Information

Takeda, M
Hokkaido University, Sapporo, Japan
Ohnuki, S
Hokkaido University, Sapporo, Japan
Suda, T
Hokkaido University, Sapporo, Japan
Watanebe, S
Hokkaido University, Sapporo, Japan
Abe, H
Japan Atomic Energy Research Institute, Takasaki, Japan
Nashiyama, I
Japan Atomic Energy Research Institute, Takasaki, Japan
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Developed by Committee: E10
Pages: 836–845
DOI: 10.1520/STP10576S
ISBN-EB: 978-0-8031-5454-4
ISBN-13: 978-0-8031-2878-1