Research Report Approved: Nov 17, 1997

F0096- Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics

An interlaboratory study was conducted by six laboratories testing nine samples to establish a precision statement for test method F0096.
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Developed by Subcommittee: F01.11
Stock # : RR-F01-1014