Work Item
ASTM WK59267
New Test Method for Use of 2N1486 Silicon Bipolar Junction Transistors as Neutron Spectrum Sensors and 1-MeV(Si) Fluence Monitors
1. Scope
This test method covers the use of 2N1486 silicon bipolar transistors as 1-MeV(Si) equivalent neutron fluence sensors and as dosimetry sensors in the determination of neutron energy spectra in the 1-MeV(Si) eqv. fluence range between 1 10^10 n/cm^2 to 1 10^12 n/cm^2.
Keywords
neutron dosimetry, displacement damage, neutron damage, radiation hardness, silicon transistors, spectrum sensors
Rationale
This standard is needed to provide silicon displacement damage effects researchers an effective means of quantifying 1-MeV(Si) eqv. neutron fluence in circumstances where other means are not practical at an increased sensitivity to neutron fluence when compared with the existing standard test method: E1855-15 Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors.
The title and scope are in draft form and are under development within this ASTM Committee.
Work Item Status
Date Initiated: 06-05-2017
Technical Contact: Andrew Tonigan
Item: 000
Ballot:
Status: