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This test method covers the measurement of leakage currents of transistors and diodes. Electronic devices exposed to ionizing radiation may show increases in leakage current as the accumulated total dose rises.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in June 2006 in accordance with section 10.6.3.1 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.
1.1 This test method covers the measurement of leakage currents of transistors and diodes. Electronic devices exposed to ionizing radiation may show increases in leakage current as the accumlated total dose rises.
1.2 These procedures are intended for the measurement of currents in the range from 10 -11 to 10 -3 A.
1.3 This test method may be used with either a virtual-ground current meter or a resistance-shunt current meter.
1.4 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this test method.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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ASTM F769-00, Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006), ASTM International, West Conshohocken, PA, 2000, www.astm.orgBack to Top