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This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in January 2016 in accordance with section 10.6.3 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.
1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F 47
1.2 This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200 000/cm2.
1.3 Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the <001> within ± 5° and must be suitably prepared by polishing or etching, or both. Unremoved processing damage may lead to etch pits, obscuring the quality of the bulk crystal.
1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
D1125 Test Methods for Electrical Conductivity and Resistivity of Water
E177 Practice for Use of the Terms Precision and Bias in ASTM Test Methods
F26 Test Methods for Determining the Orientation of a Semiconductive Single Crystal
F47 Test Method for Crystallographic Perfection of Silicon by Preferential Etch Techniques3
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ASTM F1404-92(2007), Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique (Withdrawn 2016), ASTM International, West Conshohocken, PA, 2007, www.astm.orgBack to Top