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Committee on Electronics Developing Standard on Determination of Oxygen in Aluminum
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 November 2005 Tech News

Committee on Electronics Developing Standard on Determination of Oxygen in Aluminum

ASTM International Committee F01 on Electronics is currently developing a proposed new standard that will provide uniformity in the values reported for oxygen content in aluminum alloys used for sputtering targets in the manufacture of integrated circuits. The proposed standard, WK9120, Determination of Oxygen in High Purity Aluminum and Alloys in High Purity Aluminum Base by Inert Gas Fusion Technique, is under the jurisdiction of F01.17 on Sputter Metallization.

“The proposed standard is being developed because the measurement of oxygen in aluminum used for sputtering has been found to be a very important parameter that determines the quality of the sputtering target,” says Patrick Germanaz, laboratory manager, Alcan PHP Mercus.

According to Germanaz, oxygen in aluminum always appears in the form of aluminum oxide and as such will be a dielectric particle. Arcing that results when the dielectric particle becomes exposed to sputtering plasma can be a serious source of contamination that significantly reduces semiconductor device yield in the manufacture of integrated circuits. Thus, accurately determining the oxygen content in aluminum and being able to reduce particle contamination is an important commercial and scientific consideration.

Germanaz says that participation in this proposed standard activity is open to all, noting that the subcommittee is particularly seeking input from integrated circuit device makers and manufacturers of aluminum alloys. //


Technical Information:
Patrick Germanaz, Alcan, Mercus-Garrabet, France
Phone: 05 61 02 42 40

Charles Wickersham, Cabot Corporation, Columbus, Ohio
Phone: 740/964-5799

ASTM staff: Scott Orthey
Phone: 610/832-9730

Upcoming Meeting: Feb. 6-9, 2006, Jan.-Feb. Committee Week, Phoenix, Ariz.

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