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    Semiconductor Fabrication: Technology and Metrology

    Gupta DC
    Published: 1989

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    STP 990 presents 35 papers on: Silicon Crystal Growth and Epitaxial Deposition Techniques; Fabrication Technology; Micro contamination; Metallization and Interconnects; Material Defects and Gettering; and Control Charts, Standards, and Specifications.

    Table of Contents


    The Effect of a Rotational Magnetic Field on MCZ Crystal Growing

    Silicon Slice Fracture Analysis

    Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

    Softening of Si and GaAs During Thermal Process

    Nucleation and Growth Kinetics of Bulk Microdefects in Heavily Doped Epitaxial Silicon Wafers

    On the Application of Calibration Data to Spreading Resistance Analysis

    Epitaxial Silicon Quality Improvement by Automatic Surface Inspection

    Spreading Resistance Profiles in Gallium Arsenide

    High Dose Arsenic Implant for Bipolar Buried Layers

    Accurate Junction-Depth Measurements Using Chemical Staining

    Use of Polysilicon Deposition in a Cold-Wall LPCVD Reactor to Determine Wafer Temperature Uniformity

    Dry Etching Techniques for MMIC Fabrication on GaAs

    Dry Etching of Ion Implanted Silicon: Electrical Effects

    Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride

    Plasma Etching of Aluminum Alloys in BCL3/CL2 Plasmas

    NBS Submicron Particle Standards for Microcontamination Measurement

    Particulate Cleanliness Testing of Filters and Equipment in Process Fluids

    Parameters Controlling Counting Efficiency for Optical Liquid-Borne Particle Counters

    A Correlation Study of Aluminum Film Wet Etch Uniformity with the Sputter Etch of Oxide Films

    Crack Free and Highly Reliable Double Level Metallization Process Using Plasma Oxide and Silanol-Type Sog Layers

    VLSI Defect Detection, Classification, and Reduction from In-Process and Post-Process Sram Inspections

    Advanced VLSI Isolation Technologies

    Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces

    Chemical Analysis of Metallic Impurity on the Surface of Silicon Wafers

    Process - Induced Influence on the Minority — Carrier Lifetime in Power Devices

    The Role of Oxygen Precipitates in the Gettering of Iron in Silicon

    The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique

    Defect, Dopant, and Device Modification using Si(Ge,B) Epitaxy

    Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N+(100) Epitaxial Wafers

    Electrical Characterization of Electrically Active Surface Contaminants by Epitaxial Encapsulation

    Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes

    Modification of Control Charts for Use in an Integrated Circuit Fabrication Environment

    Perkin-Elmer 544 Overlay Evaluation Using Statistical Techniques

    Revolutionizing Semiconductor Material Specifications

    Economic Impact of Standards on Productivity in the Semiconductor Industry

    Appendix: Workshop and Panel Discussions

    Appendix: Workshop and Panel Discussions

    Committee: F01

    DOI: 10.1520/STP990-EB

    ISBN-EB: 978-0-8031-5107-9

    ISBN-13: 978-0-8031-1273-5