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    Improved Surface Preparation For Spreading Resistance Measurements on p-type Silicon

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    The interpretation and the precision of spreading resistance measurements have been seen to be strongly dependent on specimen surface preparation. A bakeout at 150°C for 15 min. following specimen surface preparation with any aqueous polishing solution is considered here. It is shown both to improve the precision of the basic calibration curve for spreading resistance measurements and to significantly improve the correlation between resistivity values derived from spreading resistance measurements on a variety of specimens, and resistivity values derived from other measurement techniques. No bakeout appears to be necessary if specimen surface preparation is done with a non-aqueous polishing process.


    Bevel polishing, p, -type silicon, resistivity depth profiling, resistivity radial profiling, semiconductors, spreading resistance measurements, surface effects, surface preparation

    Author Information:

    Ehrstein, J. R.
    National Bureau of Standards, Washington, D.C.,

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47413S