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The spreading resistance measurement technique is the only one capable of providing precise thickness measurements and detailed concentration profiles on any type of active device layer or structure formed in silicon on a routine basis. The methods employed in the evaluation of thin layer structures of the type used for microwave devices is discussed and the application of these methods to thin NN+, P+NN+ and P+N silicon structures formed by combinations of diffusion, epitaxy and ion implantation is illustrated.
Diffusion, epitaxy, ion implantation, microwave devices, profiling, spreading resistance, thin silicon layers
Gruber, Gilbert A.
Solid State Measurements, Inc., Monroeville, Pennsylvania
Pfeifer, Robert F.
NCR Microelectronics Division, Miamisburg, Ohio