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    Use of the Spreading Resistance Probe for the Characterization of Microsegregation in Silicon Crystals

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    A technique for using the spreading resistance probe to quantitatively characterize microsegregation in single crystal silicon is presented. For the first time, the use of Fourier Transformations of the resistivity is developed to provide accurate quantitative information as to the periodicity and amplitude of the various components giving rise to the resistivity variations. It is demonstrated that the probe is reproducible and is capable of measuring fluctuations in resistivity to ± 1 percent, which is well below the normally observed microsegregation. Examples of the use of the technique are given by characterizing microsegregation in two Czochralski grown crystals and one modified float zone crystal. The periodicity of the principle resistivity fluctuation of the Czochralski grown crystals is evaluated by Fourier transform analysis and agrees well with the anticipated fluctuations in impurity incorporation based on growth parameters.


    crystal growth, Czochralski, Fourier transform, microsegregation, resistivity characterization, silicon, Spreading resistance

    Author Information:

    Voltmer, F. W.
    Texas Instruments Incorporated, Dallas, Texas

    Ruiz, H. J.
    Texas Instruments Incorporated, Dallas, Texas

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47407S