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    Investigations on Local Oxygen Distribution in Silicon Single Crystals by Means of Spreading Resistance Technique

    Published: Jan 1974

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    By means of spreading resistance measurements subsequent to heat-treatments at approx. 450°C and 1100°C alternatively the local distribution of oxygen in the donor state in Silicon single crystals vas examined. Oxygen striations have not been found which is in correspondence to a distribution coefficient of ko = 1.25 ± 0.17 for oxygen in Silicon. The radial distribution of oxygen in the donor state is more or less uniform except for an edge area of about 1.5 mm where the oxygen content seems to be considerably lower. A very strong relationship between electrically activated oxygen (donor state) and swirls was found: in regions containing swirls a smaller amount of oxygen was activated to the donor state. This result fits De Kock's model describing swirls as consisting of vacancy-OXYGEN-clusters.


    Oxygen in Silicon, Silicon single crystals, spreading resistance measurements, swirls

    Author Information:

    Vieweg-Gutberlet, Fritz G.
    Wacker-Chemitronic GmbH., Burghausen,

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47406S

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