You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    Comparison of the Spreading Resistance Probe with other Silicon Characterization Techniques

    Published: 0

      Format Pages Price  
    PDF (520K) 14 $25   ADD TO CART
    Complete Source PDF (6.3M) 288 $86   ADD TO CART


    Range and precision of doping concentration data in silicon materials gained by the spreading resistance technique are compared to values obtained by other characterization methods. They include junction and MOS capacitance-voltage techniques, mercury probe, four-point probe, incremental sheet resistance technique, ion microprobe, and optical methods. The comparison considers precision and resolution of each technique, range of silicon resistivities and layer thicknesses, experimental effort, analytical interpretation, and time and cost of data acquistion and evaluation. Examples are presented which demonstrate the range of applicability of each technique and how they can supplement each other so that they cover the total doping range of silicon devices.


    automation, bevelling, comparison, four-point probe, incremental MOS capacitance-voltage, incremental sheet resistance, infrared spectrometer, ion microprobe, junction capacitance-voltage, lap and stain, mercury probe, Schottky capacitance-voltage, scanning Michelson interferometer, spreading resistance

    Author Information:

    Schroen, Walter H.
    Texas Instruments Incorporated, Dallas, Texas

    Lee, Gregg A.
    Texas Instruments Incorporated, Dallas, Texas

    Voltmer, Fred W.
    Texas Instruments Incorporated, Dallas, Texas

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47403S