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    Spreading Resistance Correction Factors for (111) and (100) Surfaces

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    The effective contact radius for spreading resistance measurements on Si has been evaluated by comparision of S.R. for epitaxial layers limited by a pn-junction or by a well conducting buried layer for different crystal orientation. The contact radius on (100) surfaces showed to be greater by a factor of 1,26 than for a (111) plane. Furthermore measurements were made on samples for both (100) and (111) orientation in the resistivity range of 0,01 to 80 Ωcm with n and p-type doping. Data for spreading resistance and resulting from the predetermined contact radius for the resistivity dependent correction factor are given.


    Contact radius, correction factors, silicon, spreading resistance, surface orientation

    Author Information:

    Murrmann, H.
    Siemens AG, Munich,

    Sedlak, F.
    Siemens AG, Munich,

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47401S