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    The Preparation of Bevelled Surfaces for Spreading Resistance Probing by Diamond Grinding and Laser Measurement of Bevel Angles

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    A rapid and reproducible method for preparing bevelled surfaces on silicon has been developed as a preliminary to spreading resistance probe measurement of doping profiles or junction depth determination by staining. Several chips can be bevelled simultaneously. The sample is mounted on a carrier which is clamped on the tilting table of a microtome. The tilt is adjusted until a laser beam reflected from the surface to a calibrated wall chart is deflected to the desired angle. The bevel is then ground with a high-speed diamond wheel mounted on the microtome, taking cuts of several micrometers at a time. The bevel edge is clearly defined even for very shallow angles. The angle is accurately measured with the same laser. Because the ground surface is highly reflective, in contrast to a lapped surface, a good reading of very small angles of less than 30 minutes can be obtained. Up to a 6 meter base line is used with a lmw He-Ne laser and the reflection is visible in normal room light. Factors entering into spreading resistance are discussed, such as mechanical damage incurred in bevelling, probe impact damage, and surface cleanliness. Judged by spreading resistance, the amount of damage incurred during grinding is small and reproducible, provided care is taken to maintain the spindle so that it runs without vibrating.


    Bevelling, diamond grinding, laser bevel angle measurement, layer thickness determination, materials, resistivity measurement, silicon doping profiles, spreading resistance measurement, surface damage

    Author Information:

    Mayer, A.
    RCA Solid State Division, Somerville, N.J.

    Shwartzman, S.
    RCA Solid State Division, Somerville, N.J.

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47400S