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The spreading resistance of a metal contact on a semiconductor sample is analysed for infinite geometry, with three different boundary conditions: a specified potential of the contact, a uniform contact current density and a current density dependent on contact resistance. The cases of a thin layer on a perfectly conducting substrate and on a non-conducting substrate are analysed each for the boundary conditions of uniform current density and of the current density distribution valid for the infinite geometry. With a perfectly conducting substrate the two boundary conditions yield about 10% difference. With a non-conducting substrate calculations based on both current density distributions produce in the thin layer approximation the same In r dependence required. The constant terms in both approaches are different by 5% and the constant current density result in addition agrees with the result obtained with a totally different transmission-line approach. The actual three-point-probe measurement situation is discussed. The danger of correcting the precise spreading resistance measurement results with an error of 1%, with formulae derived on the basis of a formal model which is sensitive to the choice of the boundary conditions by up to 10%, is stressed. The effects of undefined thickness, bevel edge and transition layer curving upwards are mentioned as further complications.
Contact resistance, correction formulae, sheet resistance, silicon, spreading resistance
Severin, P. J.
Philips Research Laboratories, Eindhoven,