You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    The Preparation and Properties of Single Crystals of Aluminum Antimonide

    Published: 0

      Format Pages Price  
    PDF (252K) 13 $25   ADD TO CART
    Complete Source PDF (5.4M) 256 $77   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    Single crystals of p-type and n-type aluminum antimonide (AlSb) have been grown by the Czochralski method. Purification of the available aluminum is necessary if substantial carrier mobilities are to be achieved. The optical absorption coefficient was determined in the spectral region from 0.55 to 2.0 μ, which includes part of the principal absorption band. In addition to the absorption edge at 0.8 μ, weak absorption bands are observed in p-type material at 0.95 and 1.65 μ. Results are given for the Hall coefficient and carrier mobility in p-type AlSb as a function of temperature. At 300 K, hole mobilities in excess of 400 sq cm per volt-sec have been measured. The activation energy of the p-type impurity is 0.028 ev, and the temperature dependence of the hole mobility is T−2.2. Data on n-type material are inconclusive because of the high degree of compensation.

    Author Information:

    Burns, J. W.
    Electro-Optical Systems, Pasadena, Calif.

    Telk, C. L.
    Electro-Optical Systems, Pasadena, Calif.

    Committee/Subcommittee: F01.05

    DOI: 10.1520/STP44499S