You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    Modular Dopant for Silicon Czochralski Crystals

    Published: 0

      Format Pages Price  
    PDF (192K) 9 $25   ADD TO CART
    Complete Source PDF (5.4M) 256 $77   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    The value of a modular concept for doping Czochralski crystals is dependent upon the consistency of the dopant modules. The modules are small fractionalgram crystals of silicon containing only a known number of dopant atoms. Uniformity of module size and resistivity determines the consistency of the modules. With present techniques of growing and cutting small-diameter crystals and measuring resistivity, doping modules may be prepared which normally vary less than 3 per cent in total number of dopant atoms. For a group of three silicon crystals, the uniformity of dopant modules permitted the crystals to be doped to a target resistivity of 50 ohm-cm within 5 per cent.

    Author Information:

    Smith, C. R.
    Dow Corning Corp., Hemlock, Mich.

    Currin, C. G.
    Dow Corning Corp., Hemlock, Mich.

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP44498S