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    Changes in Stability of Germanium Alloy Transistors Through Etching, Washing, and Encapsulation Processing

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    Changes in the ICBO, Iebo and hFE reliability of germanium alloy transistors (npn and pnp computer types) as a result of etching, washing, and encapsulation processing have been investigated beyond 2500 hr. Data following operation at maximum rated power and 100 C storage data are presented for hydrogen peroxide and modified hydrogen peroxide etching solutions; for tank and turbulent washing; and for five types of fluid-base and three types of dry encapsulants.

    Author Information:

    Borofsky, Arnold J.
    Section Head, Reliability Engineering and Analysis, Sylvania Electric Products, Inc., Woburn, Mass.

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP41245S