SYMPOSIA PAPER Published: 01 January 1961
STP41245S

Changes in Stability of Germanium Alloy Transistors Through Etching, Washing, and Encapsulation Processing

Source

Changes in the ICBO, Iebo and hFE reliability of germanium alloy transistors (npn and pnp computer types) as a result of etching, washing, and encapsulation processing have been investigated beyond 2500 hr. Data following operation at maximum rated power and 100 C storage data are presented for hydrogen peroxide and modified hydrogen peroxide etching solutions; for tank and turbulent washing; and for five types of fluid-base and three types of dry encapsulants.

Author Information

Borofsky, Arnold, J.
Reliability Engineering and Analysis, Sylvania Electric Products, Inc., Woburn, Mass.
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Details
Developed by Committee: F01
Pages: 243–253
DOI: 10.1520/STP41245S
ISBN-EB: 978-0-8031-5963-1
ISBN-13: 978-0-8031-6117-7