SYMPOSIA PAPER Published: 01 January 1979
STP39131S

Laser-Induced Damage in Semiconductors

Source

The laser-induced bulk breakdown in Ge, Si and GaAs crystals at the 10.6 µm, 2.76 µm, and 2.94 µm radiation wavelengths of the pulsed CO2, Ca2F:Er3+ and YAG:Er3+ lasers is investigated. Generation of free carriers has been observed and their kinetics studied by the dc and microwave photoconductivity measurement techniques. In Si and GaAs, the laser-induced bulk damage has been observed and the damage threshold measured. In Ge, the damage was not observed due to a self-defocusing effect associated with the negative contribution of nonequilibrium electrons in the refractive index. Mechanisms of free carrier generation and laser-induced damage are discussed.

Author Information

Danileiko, YK
Manenkov, AA
Sidorin, AV
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Details
Developed by Committee: F01
Pages: 305–308
DOI: 10.1520/STP39131S
ISBN-EB: 978-0-8031-5578-7
ISBN-13: 978-0-8031-0085-5