Published: 01 January 1985
| ||Format||Pages||Price|| |
|PDF (96K)||6||$25||  ADD TO CART|
|Complete Source PDF (3.3M)||183||$56||  ADD TO CART|
Cite this document
Single crystals of silicon produced by the Czochralski process are used widely in the production of integrated circuits and other electronic devices. Recent advances in automation of industrial equipment for this process have led to the application of a dual wave band radiation thermometer. The instrument system automatically performs certain critical temperature measurements. In nonautomated equipment, these measurements require the judgement of a trained human operator.
The difficulties of measuring and controlling the temperature at the critical location are discussed, especially with regard to detecting the meltdown end point and to initially establishing the correct temperature for seeding. A description is given of the customized temperature measurement system, which is based upon an existing ratio radiation thermometer. Thermometer output characteristics are described.
Czochralski, crystal growing, silicon, dual wave band, radiation thermometer
Vice president, Ferrofluidics Corp., Nashua, NH