SYMPOSIA PAPER Published: 01 January 1979
STP38156S

Microstructural Development During Low-Dose Irradiation

Source

Interstitial-impurity trapping has been included in a time-dependent nucleation and growth model that is used to calculate both vacancy and interstitial cluster densities and size distributions during irradiation. Calculations were performed for nickel alloys with interstitial-solute binding energies between 0 and 1 eV. Number densities of both types of cluster increased with increasing binding energy, with the interstitial cluster density more strongly affected. As binding energy increased, the time required for saturation of the interstitial cluster density increased.

The model results were compared with interstitial-loop size distributions and number densities obtained by transmission electron microscopy (TEM) of Ni-4Si irradiated with 3.0-MeV Ni+ ions to doses ranging from 0.053 to 0.66 displacements per atom (dpa). The number densities were consistent with nickel-silicon binding energies of ∼0.25 eV, while the average sizes were compatible with higher binding energies.

Author Information

Hall, BO
Argonne National Laboratory, Argonne, Ill.
Potter, DI
Argonne National Laboratory, Argonne, Ill.
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Developed by Committee: E10
Pages: 32–45
DOI: 10.1520/STP38156S
ISBN-EB: 978-0-8031-5551-0
ISBN-13: 978-0-8031-0327-6