SYMPOSIA PAPER Published: 01 January 1983
STP37280S

Quantum Theory of Multiphoton Free Carrier Absorption At High Intensities in Compound Semiconductors

Source

Multiphoton absorption and emission, accompanied by scattering of free carriers in an intense radiation field, is treated by an extension of the theory of one photon free carrier absorption in polar semiconductors. The rate equation for m photon absorption, where m is a positive integer, is obtained from the equation of motion of the quantum density matrix. It is shown to be proportional to the mth power of the radiation intensity. The effect of the field on the electron during scattering is taken into account by using the exact wavefunctions of an electron in an intense radiation field in the calculation of the transition matrix elements. An expression for the average Joule heating per electron is found. A comparison with earlier treatments is given.

Author Information

Jensen, B
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Details
Developed by Committee: F01
Pages: 541–544
DOI: 10.1520/STP37280S
ISBN-EB: 978-0-8031-4865-9
ISBN-13: 978-0-8031-0708-3