SYMPOSIA PAPER Published: 01 January 1983
STP36185S

Determination of Oxygen Concentration in Silicon by Infrared Absorption

Source

Infrared absorption measurement and activation analyses were carried out for various CZ crystals with different oxygen concentrations. Data for infrared (IR) absorption were found to vary depending upon various factors such as wafer thickness and surface finishing. Under well-defined experimental conditions, however, an accurate linear correlation between the IR absorption and oxygen concentration measured by activation analysis was obtained: 6.0 × absorption coefficient = oxygen concentration in parts per million atomic (ppma).

Author Information

Abe, T
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan
Gotoh, S
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan
Ozawa, N
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan
Masui, T
R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan
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Details
Developed by Committee: F01
Pages: 469–476
DOI: 10.1520/STP36185S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9