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    STP804

    Temperature-Dependent Infrared Characterization of Silicon Wafers

    Published: 01 January 1983


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    Abstract

    The use of infrared measurements to characterize impurities in doped semiconducting silicon wafers at room and low temperatures is reviewed. Examples include the detection of antimony, arsenic, boron, phosphorus, carbon, and oxygen impurities; the spectral features of these elements are qualitatively discussed. In particular, the design and implementation of a cryostat suitable as an accessory to an infrared interferometer for nondestructive characterization of large-diameter silicon wafers at liquid nitrogen and liquid helium temperatures are also given.

    Keywords:

    cryostat, infrared characterization, silicon dopants, large-diameter silicon wafers, infrared interferometer


    Author Information:

    Mead, DG
    Nicolet Instrument Corporation, Madison, Wis.

    Gummer, RM
    Nicolet Instrument Corporation, Madison, Wis.

    Anderson, CR
    Nicolet Instrument Corporation, Madison, Wis.


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36183S