You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.

    If you are an ASTM Compass Subscriber and this document is part of your subscription, you can access it for free at ASTM Compass

    Dependence of Thin-Gate Oxide Properties on Processing

    Published: 01 January 1983

      Format Pages Price  
    PDF (184K) 13 $25   ADD TO CART
    Complete Source PDF (9.3M) 555 $66   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    Thin-gate oxides (23 nm or less) will be very important for future very-large-scale-integration (VLSI) circuits. Oxides in this thickness range can be grown in different environments and temperatures. Breakdown, interface properties, and electron and hole trapping are affected by the growth conditions. The effect of growth and anneal temperature on insulator and interface properties will be examined. Such information is useful in optimizing process conditions for the long-term reliability of thin-gate oxides.


    silicon dioxide, electrical breakdown, electron traps, hole traps, radiation damage, interface traps

    Author Information:

    Lai, SK
    Intel Corporation, Santa Clara, Calif.

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36173S