Published: Jan 1983
| ||Format||Pages||Price|| |
|PDF (184K)||13||$25||  ADD TO CART|
|Complete Source PDF (9.3M)||555||$66||  ADD TO CART|
Thin-gate oxides (23 nm or less) will be very important for future very-large-scale-integration (VLSI) circuits. Oxides in this thickness range can be grown in different environments and temperatures. Breakdown, interface properties, and electron and hole trapping are affected by the growth conditions. The effect of growth and anneal temperature on insulator and interface properties will be examined. Such information is useful in optimizing process conditions for the long-term reliability of thin-gate oxides.
silicon dioxide, electrical breakdown, electron traps, hole traps, radiation damage, interface traps
Intel Corporation, Santa Clara, Calif.