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    Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon

    Published: 01 January 1983

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    The practice of depositing polycrystalline silicon by low-pressure chemical vapor deposition (LPCVD) is discussed in terms of effect of deposition parameters on structural property relationships. Electrical and oxidation properties are also discussed.


    polycrystalline silicon, integrated circuits, interconnects, chemical vapor deposition, low-pressure chemical vapor deposition, reduced-pressure chemical vapor deposition

    Author Information:

    Hammond, ML
    Vice President, Technical Director, TETRON Inc., Cupertino, Calif.

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36168S