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    STP804

    Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon

    Published: 01 January 1983


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    Abstract

    The practice of depositing polycrystalline silicon by low-pressure chemical vapor deposition (LPCVD) is discussed in terms of effect of deposition parameters on structural property relationships. Electrical and oxidation properties are also discussed.

    Keywords:

    polycrystalline silicon, integrated circuits, interconnects, chemical vapor deposition, low-pressure chemical vapor deposition, reduced-pressure chemical vapor deposition


    Author Information:

    Hammond, ML
    Vice President, Technical Director, TETRON Inc., Cupertino, Calif.


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36168S