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    STP804

    Effects of Processing Parameters on Shallow Surface Depressions During Silicon Epitaxial Deposition

    Published: 01 January 1983


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    Abstract

    Buried layer patterns of high dopant concentration are required in semiconductor processing. These patterns are produced by diffusion through patterned oxide and are marked by shallow flat-bottomed depressions bounded by steps of a few hundreds to a few thousands angstroms in height.

    The shape and position of the surface depressions relative to the original buried layer patterns are affected by various parameters and processing steps during epitaxial deposition.

    Data from a barrel reactor are presented on the lateral displacements of surface depressions, showing the dependence of deposition parameters on symmetrical and asymmetrical distortions. Horizontal and barrel reactor configurations are compared.

    Keywords:

    silicon epitaxy, depressions, buried layers, horizontal reactor, barrel reactor, pattern distortion, pattern shift


    Author Information:

    Boydston, MR
    Siliconix Inc., Santa Clara, Calif.

    Gruber, GA
    Siliconix Inc., Santa Clara, Calif.

    Gupta, DC
    Siliconix Inc., Santa Clara, Calif.


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36166S