SYMPOSIA PAPER Published: 01 January 1983
STP36164S

Epitaxy: An Introspective Review

Source

The evolution of reactor design and gas control techniques for the deposition of silicon epitaxial layers is described. An approach to controlling a large epi factory with digital electronics is discussed. From the viewpoint of ever-growing technology and quality requirements, the present approach is to furnish the options for an automatic operation in an individual reactor.

Author Information

Williams, JH
Materials Development, Motorola Inc., Tempe, Ariz
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Details
Developed by Committee: F01
Pages: 147–150
DOI: 10.1520/STP36164S
ISBN-EB: 978-0-8031-4871-0
ISBN-13: 978-0-8031-0243-9