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    STP804

    Epitaxy: An Introspective Review

    Published: 01 January 1983


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    Abstract

    The evolution of reactor design and gas control techniques for the deposition of silicon epitaxial layers is described. An approach to controlling a large epi factory with digital electronics is discussed. From the viewpoint of ever-growing technology and quality requirements, the present approach is to furnish the options for an automatic operation in an individual reactor.

    Keywords:

    silicon epitaxy, epi facility, DDC system, horizontal reactor, vertical reactor, barrel reactor


    Author Information:

    Williams, JH
    Manager, Materials Development, Motorola Inc., Tempe, Ariz


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36164S