You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.

    If you are an ASTM Compass Subscriber and this document is part of your subscription, you can access it for free at ASTM Compass

    Epitaxy: An Introspective Review

    Published: 01 January 1983

      Format Pages Price  
    PDF (64K) 4 $25   ADD TO CART
    Complete Source PDF (9.3M) 555 $66   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    The evolution of reactor design and gas control techniques for the deposition of silicon epitaxial layers is described. An approach to controlling a large epi factory with digital electronics is discussed. From the viewpoint of ever-growing technology and quality requirements, the present approach is to furnish the options for an automatic operation in an individual reactor.


    silicon epitaxy, epi facility, DDC system, horizontal reactor, vertical reactor, barrel reactor

    Author Information:

    Williams, JH
    Manager, Materials Development, Motorola Inc., Tempe, Ariz

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP36164S