SYMPOSIA PAPER Published: 01 January 1980
STP35141S

Laser Scanning Technique for the Investigation of Power Devices

Source

A measurement technique in which inhomogeneities in lifetime or resistivity or both in large-area semiconductor p-n devices can be visualized, is described. The method utilizes a light spot that is scanned across the device area. By using a double-pass method in which the beam is scanned twice for two different bias voltages, the influence of the surface is eliminated. Absolute values of minority carrier diffusion lengths can be obtained by using a red (0.63-μm) and an infrared (1.15-μm) heliumneon laser in combination. Illuminating the specimen with light of 0.63-μm wavelength and measuring the photocurrent as a function of the space charge region width yields the diffusion length for holes in the n region. Using light of 1.15-μm wavelength in the same type of measurement yields the diffusion length of electrons in the p+ region.

Author Information

Engström, O
RIFA AB, Integrated Circuits Division, Spånga, Sweden
Drugge, B
ASEA AB, Central Research and Development Department, Västerås, Sweden
Tove, PA
Institute of Technology, University of Uppsala, Uppsala, Sweden
Price: $25.00
Contact Sales
Related
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Details
Developed by Committee: F01
Pages: 239–250
DOI: 10.1520/STP35141S
ISBN-EB: 978-0-8031-4780-5
ISBN-13: 978-0-8031-0390-0