SYMPOSIA PAPER Published: 01 January 1984
STP32682S

Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs

Source

Neutron irradiation at a flux of 5 × 1011 neutrons /cm2 sec for 18 hr has been performed on n-type GaAs with 5.9 × 10−2Ω-cm (n= 2.1 × 1016/cm3). In annealing experiments for electrical properties, it is found that neutron irradiated-induced damages are removed by the annealing temperature at 800°C. The recovery of radiation damage is also confirmed from the improvement of photoluminescence for GaAs annealed at 800°C. The magnitude of the average displacement damage introduced during neutron irradiation is estimated to be 0.15 A by the measurement of Rutherford Backscattering channeling.

Author Information

Yahagi, M
Satoh, M
Kuriyama, K
Iwamura, K
Kim, C
Shiraishi, F
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Details
Developed by Committee: F01
Pages: 587–594
DOI: 10.1520/STP32682S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7