SYMPOSIA PAPER Published: 01 January 1984
STP32679S

Neutron Transmutation Doping in Hydrogenated Amorphous Silicon

Source

A neutron irradiation for thermal neutron flux density of 5 × 1011/cm2s and irradiation time of 10 hr was applied to hydrogenated amorphous silicon (a-Si:H). The density of 31P produced by the neutron transmutation doping (NTD) was estimated to be 1012/cm3. Dark and photo conductivities were measured before and after NTD in parallel with ESR measurements. The annealing behavior of the irradiation damage was studied up to the growth temperature of a-Si:H. Dark conductivity of the well-annealed NTD a-Si:H shows an activation type conduction above room temperature with activation energy of 0.69 eV.

Author Information

Hamanaka, H
Kuriyama, K
Yahagi, M
Iwamura, K
Kim, C
Shiraishi, F
Tsuji, K
Minomura, S
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Details
Developed by Committee: F01
Pages: 558–565
DOI: 10.1520/STP32679S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7