SYMPOSIA PAPER Published: 01 January 1984
STP32678S

Production of Detector-Grade Silicon by Neutron Transmutation Doping

Source

High ohmic n-type silicon was produced from over-compensated, neutron transmutation doped P-type silicon. It was found that compensation levels of even more 70 % do not lead to the formation of p/n junctions across the wafer so that resistivities of up to 10 KOhmcm can be produced on a fairly reliable basis. The properties of NTD and conventionally doped silicon as well as their detector suitability are compared.

Author Information

Ammon, Wv
Kemmer, J
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Details
Developed by Committee: F01
Pages: 546–557
DOI: 10.1520/STP32678S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7