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    STP850

    Production and Development of Neutron Transmutation Doped Silicon

    Published: 01 January 1984


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    Abstract

    Considering the production of NTD-silicon our interest is focussing on market growth, application fields and questions like reactor capacity, costs and material quality. Market growth still is in a further steady increase and since IC application particularly CMOS devices are not expected to turn over to NTD-silicon there is plenty of reactor capacity available to follow the market increase in power device application.

    Further development of NTD-silicon is discussed regarding maximum diameter, upper resistivity limit and quality aspects.

    Keywords:

    float-zone silicon, neutron transmutation doping reactor capacity, maximum diameter, upper resistivity limit, crystal quality


    Author Information:

    Herzer, H
    Manager Float-Zone Silicon, Wacker-Chemitronic GmbH, Burghausen,


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP32677S