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The developments necessary to implement a comprehensive research programme aimed at understanding dopant incorporation in silicon are described. The two experimental techniques used, and possessing the required dynamic range and depth resolution, are high resolution Spreading Resistance and Secondary Ion Mass Spectrometry. Comparative studies of samples with both techniques lead to a greater understanding of dopant incorporation and dopant activation and provide a wealth of data for the refinement of process models such as SUPREM.
Data are presented on a number of different samples, including boron and arsenic implantations and anneals (furnace, and electron beam) in silicon and in silicon-on-sapphire.
Profiling, spreading resistance, secondary ion mass spectrometry, dopants, silicon on sapphire, annealing
Group Leader, Device Diagnostics Group, GEC Research Laboratories, Hirst Research Centre, Wembrey,