SYMPOSIA PAPER Published: 01 January 1984
STP32663S

A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope

Source

A new high sensitivity microsampling accessory incorporating an all-reflecting microscope for use with FT-IR instruments is described. Measurements of the interstitial oxygen and substitutional carbon concentrations in silicon from sampling areas as small as 100 μm × 100 μm are described. A reflectance version of the microsampling accessory has been used for mapping the epitaxial film thickness on silicon from areas as small as 50 μm × 50 μm.

Author Information

Krishnan, K
Kuehl, D
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Details
Developed by Committee: F01
Pages: 325–334
DOI: 10.1520/STP32663S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7