SYMPOSIA PAPER Published: 01 January 1984
STP32655S

Effects of Oxygen on Process-Induced Defects and Gettering in Cz-Silicon

Source

Process-induced defects (bulk stacking faults (BSF) and precipitate-defect clusters (PDC)), warp and minority lifetime have been investigated in silicon wafers with oxygen ranging from 10 to 33 ppma (ASTM F 121-79). The results indicate that the density of BSF and PDC decreased as the oxygen content decreased. The warp of as-polished wafers did not correlate with the oxygen concentration. Minority carrier lifetime measurements and DRAM yields achieved on very low oxygen wafers (<20 ppma) indicated that extrinsic gettering may be required to improve leakage current and sustain device yield in these wafers.

Author Information

Swaroop, RB
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Details
Developed by Committee: F01
Pages: 230–240
DOI: 10.1520/STP32655S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7