SYMPOSIA PAPER Published: 01 January 1984
STP32653S

The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon

Source

The rate and concentration of thermal donors generated during 450°C anneals were observed to be dependent on wafer thermal history. Oxygen thermal donors formed by the silicon-vacancy and silicon interstitial models were examined and the silicon-interstitial donor formation was observed to be the dominating mechanism for the 450°C oxygen thermal donor. Thermally induced microdefects were also observed. Depending on the wafer thermal history less than 1 × 1014 donors/cm3 to as much as 3.7 × 1014 donors/cm3 were formed during the 450°C anneals.

Author Information

Borland, JO
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Details
Developed by Committee: F01
Pages: 201–218
DOI: 10.1520/STP32653S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7