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    STP990

    Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes

    Published: 01 January 1989


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    Abstract

    Polysilicon deposition process parameters have been addressed for the preparation of poly layers having characteristics that increase extrinsic gettering behaviour, irrespective of oxygen enhanced precipitation, thus making them particularly suitable for relatively high device processing temperatures.

    Morphological parameters that correlate with extrinsic gettering efficiency have been found to be grain sizes and their preferred orientation, so care was given to produce and consistently reproduce such characteristics by a suitable choice of the deposition process parameters.

    Keywords:

    gettering, polysilicon layer, CVD, Oxygen precipitation, polysilicon structure


    Author Information:

    Borionetti, G
    Research and Development Department of DNS Electronic Materials, Novara,

    Domenici, M
    Research and Development Department of DNS Electronic Materials, Novara,

    Ferrero, G
    Research and Development Department of DNS Electronic Materials, Novara,


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26055S