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    STP990

    Electrical Characterization of Electrically Active Surface Contaminants by Epitaxial Encapsulation

    Published: 01 January 1989


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    Abstract

    Electrically active contaminants have been successfully detected on the surface of substrates using an epitaxial layer for encapsulation. P-type <100> wafers were deliberately contaminated with phosphorus and aluminum. The substrates were then subjected to a modified epitaxial growth cycle to preserve the contaminant on the surface High frequency C-V dopant profiles were performed, and electrically active contaminants were detected.

    Keywords:

    CV method, epitaxial encapsulation, contaminants, Schottky diode, depletion layer width, semiconductor


    Author Information:

    Derheimer, A
    Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.

    Takamizawa, S
    Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.

    Matlock, JH
    Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.

    Mollenkopf, H
    Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26054S