SYMPOSIA PAPER Published: 01 January 1989
STP26049S

Process - Induced Influence on the Minority — Carrier Lifetime in Power Devices

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Carrier lifetime has been studied as a function of process conditions for power semiconductor devices. The lifetime measurements have been done to see the influence of minority-carrier lifetime on device characteristics under different process conditions such as KOH etching, DI water rinse, deep diffusions, thermal oxidation, phosphorous diffusion and gold diffusion. Open Circuit Voltage Decay (OCVD) and Surface Photovoltage (SPV) techniques have been used to measure minority-carrier lifetime.

It has been observed that the starting-wafer lifetime tends to change strongly during the course of fabrication processes and shows a dependence on the injection level. The typical curves show two-fold effects : (i) The effect of traps and (ii) The carrier density. The injection-level dependence of lifetime is attributed to heavy-doping effects in silicon, and in the absence of traps, is described by an empirical relationship.

Author Information

Khanna, VK
Thakur, DK
Jasuja, KL
Khokle, WS
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Developed by Committee: F01
Pages: 324–338
DOI: 10.1520/STP26049S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5