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    Advanced VLSI Isolation Technologies

    Published: 01 January 1989

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    Common issues in VLSI isolation technologies have been identified. Based on these issues, a critical review of conventional and novel isolation technologies such as oxide, trench, SEG, SOS, SIMOX, and ZMR is presented in this paper.


    VLSI, isolation, oxide isolation, trench isolation, SEG, SOI, SOS, SIMOX, ZMR

    Author Information:

    Kuo, Y
    IBM T.J. Watson Research Center, Yorktown Heights, N.Y.

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26046S