SYMPOSIA PAPER Published: 01 January 1989
STP26039S

Plasma Etching of Aluminum Alloys in BCL /CL Plasmas

Source

Aluminum etching in BCl3/CL2 plasmas is characterized by studying the etch rate of aluminum and native aluminum oxide films as functions of reactant flow rates and rf power in a parallel plate plasma etcher. Results indicate that the etch rate is primarlly dependent upon the Cl2 concentration and is only slightly dependent upon the rf power used to sustain the discharge. Several additives are used to achieve the high resolution and anisotropic pattern required for aluminum alloys. Parametric studies support the roles of the additives have been made.

Author Information

Chen, C-H
DeOrnellas, S
Burke, B
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Details
Developed by Committee: F01
Pages: 202–211
DOI: 10.1520/STP26039S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5