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    STP990

    Softening of Si and GaAs During Thermal Process

    Published: 01 January 1989


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    Abstract

    Semiconductor materials for highly integrated circuit devices need the resistance for the slippage during thermal process to prevent the defect induced degradation. Temperature dependence of strength of cz-Si and pcz-GaAs was investigated by micro-Vickers hardness tester. Hardness of cz-Si wafers lowers sharply with testing temperature and with precipitated oxygen content. Hardness of pcz-GaAs wafers starts to decrease at a temperature about 400°C lower than is the case for Si wafers. Dopant content dependence of hardness between 600 and 700°C was not observed in Si doped or Zn doped pcz-GaAs wafers.

    Keywords:

    silicon wafer, gallium arsenide, high temperature hardness, thermal process, solid solution hardening, oxygen precipitation


    Author Information:

    Suga, H
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

    Ichizawa, M
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

    Endo, K
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

    Tomizawa, K
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26028S