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    STP990

    Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

    Published: 01 January 1989


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    Abstract

    A new single wafer epitaxial silicon reactor, the Epsilon One, is characterized by automated cassette-to-cassette wafer handling, rapid thermal cycle, and high deposition rate for wafers up to 150 mm diameter. This paper describes the reactor, and its results in terms of epi thickness and doping uniformity, epi/substrate transition width, and epi defect density.

    Keywords:

    silicon epitaxy, single wafer reactor, uniformity, autodoping, defects, edge crown


    Author Information:

    Robinson, MD
    Manager of R&DPresident, ASM EpitaxyLawrence Semiconductor Laboratories, TempeSan Jose, AZCA

    Lawrence, LH
    Manager of R&DPresident, ASM EpitaxyLawrence Semiconductor Laboratories, TempeSan Jose, AZCA


    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26027S