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    Monte Carlo Calculation of Primary Kinematic Knock-on in Sims

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    Secondary Ion Mass Spectrometry (SIMS) occupies a central position in atomic profiling of semiconductor device structures. One of the possibilities for distortion of the profiles is the phenomenon of knock-on where the incident sputtering ion transfers enough kinetic energy to the impurity atoms to push them deeper into the material before they can be sputtered and counted. The effects of sputtering and primary kinematic knock-on are investigated by means of a Monte Carlo code previously used to study ion implantation processes. In particular, the dependence of the primary kinematic knock-on on the mass and energy of the sputtering ion as well as the mass of the impurity atom are presented.


    atomic profiling, displacement damage, ion implantation, Monte Carlo calculation, recoil implantation, Secondary Ion Mass Spectrometry, sputtering

    Author Information:

    Albers, J
    physicist, National Bureau of Standards, Gaithersburg, Maryland

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25787S