You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry

    Published: 0

      Format Pages Price  
    PDF (180K) 14 $25   ADD TO CART
    Complete Source PDF (9.4M) 699 $70   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    Silicon wafers, implanted with As or BF2, were subjected to isochronal anneals and the resulting impurity profiles were measured with both spreading resistance probe (SRP) and secondary ion mass spectrometry (SIMS). The two measurements converged as the anneal temperature was increased. This is to be expected as SRP measures the electrically active impurity concentration, while SIMS measures the atomic concentration of the impurity present. An anomalous kink in the BF2 profile observed in SIMS measurements was not present in the SRP measurement. Junction depths measured by SRP were consistently shallower than measurements made by SIMS. The SRP and SIMS profiles were compared to those profiles simulated with SUPREM, a process modeling computer program.


    silicon, arsenic, boron, secondary ion mass spectrometry, spreading resistance, depth profiling

    Author Information:

    Sweeney, GG
    senior scientistsMotorola Inc., Mesa, AZ

    Alvarez, TR
    senior scientistsMotorola Inc., Mesa, AZ

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25786S